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| INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA1567 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= -50V(Min) *DC Current Gain: hFE= 50(Min)@ (VCE= -1V,IC= -6A) *Low Saturation Voltage: VCE(sat)= -0.35V(Max)@ (IC= -6A, IB -0.6A) B APPLICATIONS *Designed for DC motor driver, chopper regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation @TC=25 Junction Temperature Storage Temperature VALUE -50 -50 -6 -12 -3 35 150 -55~150 UNIT V V V A A W PC TJ Tstg isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SA1567 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA ; IB= 0 -50 V VCE(sat) Collector-Emitter Saturation Voltage IC= -6A; IB= -0.3A B -0.35 V A ICBO Collector Cutoff Current VCB= -50V ; IE= 0 -100 IEBO Emitter Cutoff Current VEB= -6V; IC= 0 -100 A hFE DC Current Gain IC= -6A ; VCE= -1V 50 COB Output Capacitance IE=0 ; VCB= -10V;ftest= 1.0MHz IE= 0.5A ; VCE= -12V 330 pF fT Current-Gain--Bandwidth Product 40 MHz Switching Times s ton Turn-on Time IC= -6A ,RL= 4, IB1= -IB2= -0.12A,VCC= -24V 0.4 tstg Storage Time 0.4 s tf Fall Time 0.2 s isc Websitewww.iscsemi.cn 2 |
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